Multi-Cell Soft Er
نویسندگان
چکیده
Soft error performance of 16-nm designs fabricated using a commercial bulk C evaluated using heavy-ions. Results included variations show that multi-cell upsets dominate Dual-port SRAM has higher cross-section SRAM but did not have any multi-cell upset a direction. TCAD simulations showing the perturbation in the electric parameters as a fu LET support the experimental data. KeywordsSRAM, FinFET technology, sca TCAD modeling, multi-bit upsets
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